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  ¡Ü High vapor pressure
¡Ü Thermal stability prior to deposition, no self-decomposition
¡Ü Aggressive reaction with complementary precursors
¡Ü Ease of handling and transfer
¡Ü Chemisorbs to substrate
¡Ü Noncorrosive to substrate
¡Ü High purity
¡Ü Low hazard by-products
¡Ü No gas phase reaction



 
  Abbr. Chemical formula V.P. at T
Al2O3  TMA  Al(CH3)3  8.7 torr at 20 ¡É
HfO2  TEMAHf  Hf[(C2H5)(CH3)N]4  1.2 torr at 60 ¡É
 HfCl4  HfCl4  1 torr at 190 ¡É
ZrO2  TEMAHZr  Zr[(C2H5)(CH3)N]4  1 torr at 70 ¡É
 ZrCl4  ZrCl4  1 torr at 186 ¡É
TiN  TiCl4  TiCl4  10 torr at 20 ¡É
 TDMAT  Ti[N(CH3)2]4  1 torr at 60 ¡É
TaN  TaCl5  TaCl5  1 torr at 111 ¡É
¡Ü DEZn, DMCd, TEOS
¡Ü ±âŸ Metal Organic Precursors :
  Al,As,B,Bi,Br,Cd,Cl,Co,Fe,Ga,H,I,In,Li,Mg,N,Nb,P,Sb,Se,Si,Sn,Ta,Te,Ti,Y,Zn
¡Ü H2Se 99.998% Gas



 
Area Application Associated film types
High-k  gate oxides, storage capacitor dielectrics  AL2O3, HfO2, HfSiO, HfON
Interconnects  Cu diffusion barriers / adhesion promoters  TiN, Ru, TaN, Ta, WN, WCN
Hard drives
 Barrier in magnetic tunnel junctions,
 used in magnetic read heads
 AL2O3, HfO2
TFEL displays  Phosphorescent layer  ZnS:Mn, ZnS:xx, CaS:xx, SrS:xx
Solar cells
 Passivation of silicon  AL2O3
 Transparent conduction oxide  ZnO
MEMS
 Wear resistant coatings  AL2O3
 Anti-stiction coatings (charge dissipation
 and hydrophobic coatings
 AL2O3 (Zn doping for charge)
 Heat spreader/dissipater  AIN
OLEDs
 Pinhoe free passivation layers for OLEDs
 and ploymers
 AL2O3, Si3N3