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● High vapor pressure
● Thermal stability prior to deposition, no self-decomposition
● Aggressive reaction with complementary precursors
● Ease of handling and transfer
● Chemisorbs to substrate
● Noncorrosive to substrate
● High purity
● Low hazard by-products
● No gas phase reaction |
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Abbr. |
Chemical formula |
V.P. at T |
| Al2O3 |
TMA |
Al(CH3)3 |
8.7 torr at 20 ℃ |
| HfO2 |
TEMAHf |
Hf[(C2H5)(CH3)N]4 |
1.2 torr at 60 ℃ |
| HfCl4 |
HfCl4 |
1 torr at 190 ℃ |
| ZrO2 |
TEMAHZr |
Zr[(C2H5)(CH3)N]4 |
1 torr at 70 ℃ |
| ZrCl4 |
ZrCl4 |
1 torr at 186 ℃ |
| TiN |
TiCl4 |
TiCl4 |
10 torr at 20 ℃ |
| TDMAT |
Ti[N(CH3)2]4 |
1 torr at 60 ℃ |
| TaN |
TaCl5 |
TaCl5 |
1 torr at 111 ℃ |
● DEZn, DMCd, TEOS
● 기타 Metal Organic Precursors :
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Al,As,B,Bi,Br,Cd,Cl,Co,Fe,Ga,H,I,In,Li,Mg,N,Nb,P,Sb,Se,Si,Sn,Ta,Te,Ti,Y,Zn |
● H2Se 99.998% Gas |
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| Area |
Application |
Associated film types |
| High-k |
gate oxides, storage capacitor dielectrics |
AL2O3, HfO2, HfSiO, HfON |
| Interconnects |
Cu diffusion barriers / adhesion promoters |
TiN, Ru, TaN, Ta, WN, WCN |
| Hard drives |
Barrier in magnetic tunnel junctions,
used in magnetic read heads |
AL2O3, HfO2 |
| TFEL displays |
Phosphorescent layer |
ZnS:Mn, ZnS:xx, CaS:xx, SrS:xx |
| Solar cells |
Passivation of silicon |
AL2O3 |
| Transparent conduction oxide |
ZnO |
| MEMS |
Wear resistant coatings |
AL2O3 |
Anti-stiction coatings (charge dissipation
and hydrophobic coatings |
AL2O3 (Zn doping for charge) |
| Heat spreader/dissipater |
AIN |
| OLEDs |
Pinhoe free passivation layers for OLEDs
and ploymers |
AL2O3, Si3N3 |
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